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| D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 L7 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG, 81726 Munchen, Germany (c) Infineon Technologies AG 2008. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA622L7 BGA622L7, Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Revision History: 2008-04-14, Rev. 2.2 Previous Version: 2006-05-19 Page All Subjects (major changes since last revision) Document layout change Trademarks SIEGET(R) is a registered trademark of Infineon Technologies AG. Data Sheet 3 Rev. 2.2, 2008-04-14 BGA622L7 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection 1 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Feature * High gain |S21|2 = 17.5 dB at 1.575 GHz |S21|2 = 16.8 dB at 1.9 GHz |S21|2 = 16.2 dB at 2.14 GHz * Low noise figure, NF = 0.95 dB at 1.575 GHz * Operating frequency range 0.5 - 6 GHz * Typical supply voltage: 2.75 V * On/Off-Switch * Output-match on chip, input pre-matched * Low external part count * Tiny TSLP-7-1 leadless package * 70 GHz fT - Silicon Germanium technology * 2 kV HBM ESD protection (Pin-to-Pin) * Pb-free (RoHS compliant) package 6 5 4 7 1 2 3 TSLP-7-1 Applications * LNA for GSM, GPS, DCS, PCS, UMTS, Bluethooth, ISM and WLAN Figure 1 Description Pin connection The BGA622L7 is a wide band low noise amplifier, based on Infineon Technologies' Silicon Germanium Technology B7HF. The out-pin is simultaneously used for RF out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level of 0 V or an open switches the device on and a DC level of VCC switches off, it provides an insertion loss of 26 dB together with a high IIP3 up to 24 dBm at GPS frequencies. Type BGA622L7 Package TSLP-7-1 Marking BX Note: ESD: Electrostatic discharge sensitive device, observe handling precaution Data Sheet 4 Rev. 2.2, 2008-04-14 BGA622L7 Maximum Ratings 2 Maximum Ratings Table 1 Parameter Maximum ratings Symbol Limit Value 3.5 4 0.1 1 10 6 35 150 -65... 150 -65... 150 2000 Unit V V mA mA mA dBm mW C C C V VCC Vout Current into pin In Iin Current into pin Out Iout Current into pin VCC IVcc Pin RF input power 1) Total power dissipation, TS < 142 C Ptot Junction temperature TJ Ambient temperature range TA Storage temperature range TSTG ESD capability all pins (HBM: JESD22-A114) VESD Voltage at pin Out 1) TS is measured on the ground lead at the soldering point Voltage at pin VCC Note: All Voltages refer to GND-Node Thermal resistance Table 2 Parameter 1) Thermal resistance Symbol Value Unit K/W RthJS 240 Junction - soldering point 1) For calculation of RthJA please refer to Application Note Thermal Resistance Top View 1 7 6 In 2 BGA622L7 P-TSLP-7-1 5 Out 3 4 150pF DC, 2.75V BGA622L7_S_Parameter_Circuit.vsd Figure 2 S-Parameter Test Circuit (loss-free microstrip line) Data Sheet 5 Rev. 2.2, 2008-04-14 BGA622L7 Electrical Characteristics 3 Electrical Characteristics Electrical Characteristics at TA = 25 C (measured according to Figure 2) VCC = 2.75 V, Frequency = 1.575 GHz, unless otherwise specified 3.1 Table 3 Parameter Electrical Characteristics Symbol Min. Values Typ. 17.5 -26 5 12 0.95 -2 24 -20 260 5.8 0 0.8 Max. dB dB dB dB dB dBm dBm dBm A mA V f = 1 MHz, Unit Note / Test Condition Insertion power gain Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Noise figure (ZS = 50 ) Input third order intercept point (On-State) 1) |S21|2 |S21|2 RLin RLout F50 IIP3 IIP3 PIN = -28 dBm f = 1 MHz, Input third order intercept point1) (Off - State) Total device off current Total device on current On / Off switch control voltage PIN = -8 dBm VCC = 2.75 V, Vout = VCC VCC = 2.75 V VCC = 2.75 V ON-Mode: Vout = Von Input power at 1 dB gain compression P-1dB Itot-off Itot-on Von Voff 2.0 3.5 V VCC = 2.75 V OFF-Mode: Vout = Voff 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 to 6 GHz Data Sheet 6 Rev. 2.2, 2008-04-14 BGA622L7 Electrical Characteristics 3.2 Electrical Characteristics at TA = 25 C (measured according to Figure 2) VCC = 2.75 V, Frequency = 2.14 GHz, unless otherwise specified Table 4 Parameter Electrical Characteristics Symbol Min. Values Typ. 16.2 -23 6 12 1.05 0 22 Max. dB dB dB dB dB dBm dBm f = 1 MHz, PIN = -28 dBm f = 1 MHz, PIN = -8 dBm Unit Note / Test Condition Insertion power gain Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Noise figure (ZS = 50 ) Input third order intercept point (On-State) 1) |S21| |S21|2 RLin RLout F50 IIP3 IIP3 2 Input third order intercept point1) (Off-State) Input power at 1 dB gain compression P-1dB -16 dBm 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 to 6 GHz Data Sheet 7 Rev. 2.2, 2008-04-14 BGA622L7 Measured Parameters 4 Measured Parameters Power Gain |S | , G = f(f) 21 ma V = 2.75V, I = 5.8mA CC tot-on 25 2 Off Gain |S | = f(f) 21 V = 2.75V, V = 2.75V, I CC OUT 0 -5 -10 2 tot-off = 0.3mA G 20 ma |S |2 21 -15 -20 |S21|2, Gma [dB] 15 |S | [dB] -25 -30 -35 2 10 5 21 -40 -45 0 0 1 2 3 4 5 6 -50 0 1 2 3 4 5 6 Frequency [GHz] Frequency [GHz] Reverse Isolation |S | = f(f) 12 = 5.8mA V = 2.75V, I CC tot-on 0 -5 -10 Matching |S |, |S | = f(f) 11 22 = 5.8mA V = 2.75V, I CC tot-on 0 S11 -5 -15 -20 -25 -30 -35 |S11|, |S22| [dB] |S12| [dB] -10 -15 -40 -45 -50 0 1 2 3 4 5 6 -20 0 1 2 3 4 5 6 S 22 Frequency [GHz] Frequency [GHz] Data Sheet 8 Rev. 2.2, 2008-04-14 BGA622L7 Measured Parameters Stability K, B = f(f) 1 VCC = 2.75V, I tot-on = 5.8mA 5 4.5 4 3.5 Noise Figure F = f(f) VCC = 2.75V, I tot-on = 5.8mA, ZS = 50 1.5 1.4 1.3 1.2 K 3 2.5 2 1.5 1.1 F [dB] B1 0 2 4 6 8 10 K, B1 1 0.9 0.8 0.7 0.6 0.5 0 0.5 1 1.5 2 2.5 3 1 0.5 0 Frequency [GHz] Frequency [GHz] Device Current I = f(T , V ) tot-on A CC V = parameter in V CC 8.5 Device Current I = f(V , T ) tot-on CC A T = parameter in C A 8.5 3.4 8 8 -40 20 7.5 3.2 Itot-on [mA] 7.5 85 7 Itot-on [mA] 7 3 6.5 6.5 2.8 6 6 2.6 5.5 5.5 5 -40 -20 0 20 40 60 80 5 2.6 2.8 3 3.2 3.4 TA [C] VCC [V] Data Sheet 9 Rev. 2.2, 2008-04-14 BGA622L7 Package Information 5 Package Information Top view 0.4 0.05 MAX. +0.1 Bottom view 1.3 0.05 1 0.05 4 5 6 1.7 0.05 6 x 0.2 0.035 1) 7 3 Pin 1 marking 2 1 6 x 0.2 0.035 1) GPC09484 1) Dimension applies to plated terminal Figure 3 Package Outline TSLP-7-1 4 0.5 2.18 Pin 1 marking 1.45 CPSG9506 Figure 4 Tape for TSLP-7-1 Data Sheet 10 8 2 0.05 1.2 0.035 1) 1.1 0.035 1) Rev. 2.2, 2008-04-14 |
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